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Doped Elongated Semiconductors, Growing Such 

• Semiconductors, Devices Including Such .... 
U.S. S.N. 09/935/776 
H00498.70154/TJO/DPM 



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Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.701 54/TJO/DPM 



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r 




reactant 




reactant 

w 




cluster formation 



nucleaction + growth 



nanowire 



v 
Fig. 3 



Diameter control concept 




Silane CVD 





IP 



V 

Fig. 4 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498. 70 1 54/TJO/DPM 



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Doped Elongated Semiconductors, Growing Such 

• Semiconductors, Devices Including Such .... ^^^^ 
U.S. S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Doped Elongated Semiconductors, Growing Such 

• Semiconductors- Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70154/TJO/DPM 



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First layer 

Fig. 7C 




Second layer 



Fig. 7D 




Fig. 7E 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.701 54/TJO/DPM 



l.O-i 



b 0.5- 

'x 

to 

CL 

J. 0.0- 



-0.5- 



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To ^05 O0 o!7 



1.0 



V(volts) 



Fig. 8A 



1.0H 
0.5 
0.0- 
-0.5- 
-1.0- 



12345678 




-0.1 -0.05 0.0 
V(volts) 



0.05 



Fig. 8B 



1.0-1 
0.5 
0.0- 
-0.5- 
-1.0 



Fig. 8C 



-1.0 -0.5 0.0 0.5 
V(volts) 



1.0 



Doped Elongated Semiconductors, Growing Such 




t i i i r 



-1.0 -0.5 0.0 0.5 1.0 
V(volts) 

Fig. 9A 




51 O0 05 W 

V(volts) 



Fig. 9B 



Doped Elongated Semiconductors, urowing buch 
Semiconductors. Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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-Vg <0 
-Vg = 0 




Fig. 10A 



Vg < 0 

Vg = 0 




Fig. 10B 



Doped Elongated Semiconductors. Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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4.0-1 



2.0- 



0.0- 



-2.0- 



-4.0- 




-0.01 



-0.005 



0.0 
V(volts) 



0.005 0.01 



Fig. 11 A 



0.5- 



0.0- 



-0.5- 



-0.04 -0.02 O0 O02 O04 
V(volts) 



Fig. 11 B 



Doped Elongaied Semiconductors, Growing Such 

• Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Doped Elongated Semiconductors, wowing aucn 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Fig. 13B 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such . 
U.S.S.N. 09/935/776 
H00498.701 54/TJO/DPM 



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I6-1 




Diameter (nm) 



Fig. 14A 



25-, 



20- 




18 20 22 24 



Diameter (nm) 



Fig. 14B 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
HO0498.70 1 54/TJO/DPM 



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i r 

10 12 14 16 
Diameter (nm) 



Fig. 14C 



20-i 



o 

to 
o 




40 60 80 
Diameter (nm) 



Fig. 14D 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70154/TJO/DPM 



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Fig. 15 




Fig. 16A 




Fig. 16C 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.R 09/935/776 
H00498.70 1 54/TJO/DPM 



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Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... A 
U.S.S.N. 09/935/776 ■ 
H00498.70 1 54/TJO/DPM ^ 



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Fig. 17C 




Fig. 17D 



Doped Elongated Semiconductors, Growing Such 




Fig. 18B 




Fig. 18C 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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r 




(GaN) vapor 




900 °C 




(Ga,N) vapor 



900 °C 



cool 




(Fe,Ga,N) liquid 
nanocluster from 
laser ablation 



nucleation 
of nanowire 



Fig. 19 



nanowire nanocluster solidifies; 
growth growth ends 

J 



Doped Elongated Semiconductors, Growing Such 




Fig. 20A 



(002) 




~i 1 1 1 1 r 

35 40 45 50 55 60 



20 (degrees) 

Fig. 20B 



Doped Elongated Semiconductors, Urowmg bucn 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Fig. 21B 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



0 

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^08 -6.4 O0 04 08 
Voltage (V) 



Fig. 22B 




^08 -0.4 o!o 04 08 
Voltage (V) 



Fig. 22C 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.R 09/935/776 
H00498.70 1 54/TJO/DPM 



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Voltage (V) 



Fig. 23B 



Doped Elongated Semiconductors, Growing Such 




Voltage (V) 

Fig. 23C 




-4-3-2-101234 
Voltage (V) 



Fig. 23D 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.701 54/TJO/DPM 



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Fig. 24A 




1 i i i r 



1.6 2.0 2.4 2.8 3.2 
Forward bias (V) 



Fig. 24B 



Doped Elongated Semiconductors, Growing Such 




700 800 900 

Wavelength (nm) 

Fig. 24C 




600 700 800 

Wavelength (nm) 



Fig. 24D 



Doped Elongated Semiconductors, Growing Such 




Fig. 25A 

1200- 
800- 
400- 

o\ 

-4 -2 0 2 4 

Bias (V) 

Fig. 25B 



200- 




350 400 450 500 
Wavelength (nm) 

Fig. 25C 




Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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r 




Fig. 26D 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Voltage (V) 

Fig. 27B 




Voltage (V) 



Fig. 27C 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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40- 
20- 
0- 

-20 

-40H 




l'.O -0.5 o!o 05 V0 
Voltage (V) 

Fig. 27D 



p-type 




n-type 



Forward bias 

Fig. 27E 



p-type n-type 




?/////////, 



Reverse bias 

Fig. 27F 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Fig. 28B 



Doped Elongated Semiconductors. Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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0.5- 



°°-H 1 1 1 r 

-4 -2 0 2 4 



Voltage C-B (V) 

Fig. 28D 



Doped Elongated Semiconductors, Growing Such 
Semiconductors. Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Doped Elonaated Semiconductors, Growing Such 

• Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70154/TJO/DPM 



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Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H0O498.70 1 54/TJO/DPM 



36/43 




Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.701 54/TJO/DPM 



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Doped Elongated Semiconductors. Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Fig. 31 A 




Fig. 31 B 



Doped Elongated Semiconductors, Growing Such 

• Semiconductors, Devices Including Such 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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16- 



CD 

"g 12- 
S> 

o 10- 
S 8- 



A 



A 




-20 0 20 
Angle (deg.) 



n 1 r 

6 7 8 

Flow rate (mm/s) 

Fig. 31 C 



10 



250- 



8r 200H 
o 



z 150H 

I 100H 
o 



50- 



0- 



i 

0 



10 20 30 

Time (min.) 

Fig. 31 D 



40 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Fig. 32A 




Fig. 32B 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.701 54/TJO/DPM 



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Fig. 32C 




Fig. 32D 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Fig. 33B 




Fig. 33C 



• 



Doped Elongated Semiconductors, Growing Such 
Semiconductors, Devices Including Such .... 
U.S.S.N. 09/935/776 
H00498.70 1 54/TJO/DPM 



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Fig. 33D 




Voltage (V) 



Fig. 33E